80713 tkim tc-00002942 no.a2196-1/8 semiconductor components industries, llc, 2013 august, 2013 http://onsemi.com NGTB20N60L2TF1G features ? igbt v ce (sat)=1.45v typ. (i c =20a, v ge =15v) ? adaption of full isolation type package ? igbt t f =67ns typ. ? enhansment type ? diode v f =1.5v typ. (i f =20a) ? maxium junction temperature tj=175 c ? diode t rr =70ns typ. applications ? power factor correction of white goods appliance ? general purpose inverter specifications absolute maximum ratings at ta = 25 c, unless otherwise specified parameter symbol conditions ratings unit collector to emitter voltage v ces 600 v gate to emitter voltage v ges 20 v collector current (dc) i c *1 limited by tjmax @ tc=25 c *2 40 a @ tc=100 c *2 20 a collector current (pulse) i cp pulse width limited by tjmax 80 a diode average output current i o 20 a allowable power dissipation p d tc=25 c (our ideal heat dissipation condition) *2 64 w note : * 1 collector current is calculated from the following formula. con tinued on next page. * 2 our condition is radiation from backside. the method is applying silicone grease to the backside of the de vice and attaching the device to wa ter-cooled radiator made of aluminium. package dimensions unit : mm (typ) 7538-001 n-channel igbt 600v, 20a, v ce (sat);1.45v to-3pf-3l with low v f switching diode stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended oper ating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. ordering & package information device package shipping note NGTB20N60L2TF1G to-3pf-3l sc-94 30 pcs. / tube pb-free marking electrical connection orderin g numbe r : ena2196 to-3pf-3l 15.5 5.5 3.0 0.9 0.75 3.6 2.0 2.0 4.0 123 3.5 5.0 2.0 4.5 3.3 10.0 25.0 24.5 19.3 5.45 5.45 2.0 1: gate 2: collector 3: emitter NGTB20N60L2TF1G gtb20n 60l2 lot no. 2 1 3 tjmax - tc i c (tc)= r th (j-c) v ce (sat)(tjmax, i c (tc))
NGTB20N60L2TF1G no.a2196-2/8 continued from preceding page. parameter symbol conditions ratings unit junction temperature tj 175 c storage temperature tstg - 55 to +175 c electrical characteristics at ta = 25 c, unless otherwise specified parameter symbol conditions ratings unit min typ max collector to emitter breakdown voltage v( br ) ces i c =500 a, v ge =0v 600 v collector to emitter cut off current i ces v ce =600v, v ge =0v tc=25 c tc=150 c 10 a 1ma gate to emitter leakage current i ges v ge = 20v, v ce =0v 100 na gate to emitter threshold voltage v ge (th) v ce =20v, i c =250 a 4.5 6.5 v collector to emitter saturation voltage v ce ( sat ) v ge =15v, i c =20a tc=25 c tc=150 c 1.45 1.65 v 1.8 v diode forward voltage v f i f =20a 1.5 v input capacitance cies v ce =20v,f=1mhz 2000 pf output capacitance coes 60 pf reverse transfer capacitance cres 50 pf turn-on delay time t d (on) v cc =300v,i c =20a r g =30 ,l=200 h v ge =0v/15v, vclamp=400v see fig.1, fig.2 60 ns rise time t r 37 ns turn-on time ton 400 ns turn-off delay time t d (off) 193 ns fall time t f 67 ns turn-off time toff 281 ns total gate charge qg v ce =300v, v ge =15v, i c =20a 84 nc gate to emitter charge qge 16 nc gate to collector ?miller? charge qgc 37 nc diode reverse recovery time t rr i f =10a , di/dt=100a/ s, v cc =50v see fig.3 70 ns thermal characteristics at ta = 25 c, unless otherwise specified parameter symbol conditions ratings unit thermal resistance igbt (junction- case) rth(j-c)(igbt) tc=25 c (our ideal heat dissipation condition)*2 2.33 c /w thermal resistance diode (junction- case) rth(j-c)(diode) tc=25 c (our ideal heat dissipation condition)*2 2.36 c /w thermal resistance (junction- atmosphere) rth(j-a) 47.5 c /w
NGTB20N60L2TF1G no.a2196-3/8 fig.1 switching time test circuit fig.2 timing chart fig.3 reverse recovery time test circuit 90% 0 90% 0 10% 10% v ge v ce i c 10% 10% 90% 10% t off t d (off) t f t r t d (on) t on it16383 v cc NGTB20N60L2TF1G 500 h driver igbt dut r g v cc NGTB20N60L2TF1G dut clamp di 200 h
NGTB20N60L2TF1G no.a2196-4/8
NGTB20N60L2TF1G no.a2196-5/8
NGTB20N60L2TF1G no.a2196-6/8
NGTB20N60L2TF1G no.a2196-7/8 outline drawing NGTB20N60L2TF1G mass (g) unit 5.5 * for reference mm
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